The drift velocity(漂移速度) is the flow velocity that a particle, such as an electron, attains due to an electric field. It can also be referred to as axial drift velocity. In general, an electron will 'rattle around' randomly in a conductor at the Fermi velocity. An applied electric field will give this random motion a small net flow velocity in one direction.
In a semiconductor, the two main carrier scattering mechanisms are ionized impurity scattering and lattice scattering.
Because current is proportional to drift velocity, which in a resistive material is, in turn, proportional to the magnitude of an external electric field, Ohm's law can be explained in terms of drift velocity.
1、以铜为例,电子的平均漂移速度为 0.3 mm/sec.
飘过10米的电线,大约历时9分钟。
2、这个数据的来源是:
Electricity is most commonly conducted in a copper wire. Copper has a density of 8.94 g/cm3, and an atomic weight of 63.546 g/mol, so there are 140685.5 mol/m3. In one mole of any element there are 6.02×1023 atoms (Avogadro's constant). Therefore in 1 m3 of copper there are about 8.5×1028 atoms (6.02×1023 × 140685.5 mol/m3). Copper has one free electron per atom, so n is equal to 8.5×1028 electrons per cubic metre.
Assume a current I = 3 amperes, and a wire of 1 mm diameter (radius = 0.0005 m). This wire has a cross sectional area of 7.85×10−7 m2 (A = π × 0.00052). The charge of oneelectron is q = −1.6×10−19 C.